2005. 5. 9 1/2 semiconductor technical data krc281u~krc286u epitaxial planar npn transistor revision no : 0 switching application. audio muting application. features high emitter-base voltage : v ebo =25v(min) high reverse h fe : reverse h fe =150(typ.) (v ce =-2v, i c =-4ma) low on resistance : r on =1 (typ.) (i b =5ma) with built-in bias resistors. simplify circuit design. reduce a quantity of parts and manufacturing process. dim millimeters a b d e usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 c g h j k l k 1 3 2 e b d a j g c l h mm n n m 0.42 n 0.10 min + _ + _ + _ + _ 1. emitter 2. base 3. collector characteristic symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 25 v collector current i c 300 ma collector power dissipation p c 100 mw junction temperature t j 150 storage temperature range t stg -55 150 maximum rating (ta=25 ) equivalent circuit r1 c e b type name marking type krc281u krc282u krc283u KRC284U krc285u krc286u mark mq mr ms mt mu mv mark spec
2005. 5. 9 2/2 krc281u~krc286u revision no : 0 characteristic symbol test condition min. typ. max. unit collector-emitter breakdown voltage bv ceo i c =1ma 20 - - v collector-base breakdown voltage bv cbo i c =50 a 50 - - v emitter-base breakdown voltage bv ebo i e =50 a 25 - - v collector cut-off current i cbo v cb =50v, i e =0 - - 0.1 a collector-emitter saturation voltage v ce(sat) i c =30ma, i b =3ma - - 0.1 v dc current gain h fe v ce =2v, i c =4ma 350 - 1200 input resistor krc281u r 1 - 2.2 - k krc282u - 4.7 - krc283u - 5.6 - KRC284U - 6.8 - krc285u - 10 - krc286u - 22 - transition frequency f t * v ce =6v, i c =4ma, - 30 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 4.8 - pf electrical characteristics (ta=25 ) * characteristic of transistor only. note) h fe classification b:350 1200
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